CY7C2570KV18-500BZC

Memory IC Overview

The CY7C2570KV18-500BZC is a 72-Mbit DDR II+ Synchronous Pipelined SRAM with a 2M x 36 organization. It supports a maximum operating frequency of 500 MHz, enabling data transfer rates up to 1000 MHz via double data rate interfaces. The device operates within a core voltage range of 1.7 V to 1.9 V and features a 165-ball FBGA package (13 x 15 x 1.4 mm). Key specifications include a 450 ps access time, 2.5-cycle read latency in standard mode, and integrated On-Die Termination (ODT) for input signals.

Memory IC Feature Summary

• DDR II+ architecture with 2-word burst capability and 2.5-cycle read latency
• Integrated On-Die Termination (ODT) for DQ, BWS, and clock inputs
• Echo clocks (CQ/CQ) and Valid Data Indicator (QVLD) for simplified high-speed capture
• Programmable output impedance via ZQ pin and JTAG 1149.1 test access port

Memory IC Applications

• High-bandwidth networking equipment requiring fast packet processing
• Telecommunications infrastructure systems
• Industrial control systems needing rapid data buffering
• Test and measurement instruments

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required 500 MHz performance level. Confirm that the package variant corresponds to the 165-ball FBGA form factor. Ensure compatibility with the 1.8V core voltage supply requirements. Check for RoHS compliance status if environmental regulations apply to the target assembly process.

Memory IC Selection Notes

Select this component when a 72-Mbit density with a 36-bit data width is required. Choose this part for designs utilizing DDR II+ interfaces with 2.5-cycle latency. Consider this option for applications demanding on-die termination to reduce external components. Evaluate suitability for industrial temperature ranges if specified by the manufacturer.

Memory IC Part Context

This device belongs to the CY7C2570KV18 family of 72-Mbit DDR II+ SRAMs. It shares architectural similarities with other members like the CY7C2566KV18 and CY7C2568KV18 but differs in data bus width. The family utilizes advanced synchronous peripheral circuitry paired with an SRAM core to achieve high-frequency operation.

Memory IC FAQ

How does the DOFF pin affect read latency?

When the DOFF pin is asserted HIGH, the device operates with a 2.5-cycle read latency. Asserting it LOW switches the device to DDR I mode with a 1-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for programmable impedance matching. An external resistor connected between ZQ and ground tunes the output driver impedance to match the system data bus.