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The D40LD005FP#H0 is a high-voltage N-channel Power MOSFET manufactured by Renesas Electronics Corporation. It features a breakdown voltage of 400V and a continuous drain current rating of 5A. The device exhibits a maximum on-state resistance (RDS(on)) of 1.2Ω at a gate-source voltage of 10V. Designed for automotive applications, it meets the AEC-Q101 qualification standard. The component operates within a junction temperature range of -40°C to +175°C and is housed in a compact TO-252AA package.
Verify the specific suffix #H0 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives and confirm the active production status directly with the manufacturer or authorized distributors prior to procurement.
Select this component for designs requiring robust high-voltage handling in space-constrained automotive environments. Evaluate thermal management requirements given the 175°C operating limit and ensure gate drive voltages align with the specified RDS(on) test conditions for optimal efficiency.
This part belongs to Renesas' automotive-grade discrete semiconductor portfolio. It complements other high-voltage MOSFETs designed for demanding automotive electrical systems. The series focuses on providing reliable performance under harsh environmental conditions while maintaining low conduction losses.
Consult official Renesas cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives from other manufacturers without verifying electrical parameters and package dimensions.