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The Diotec Semiconductor DB3 is a bidirectional silicon trigger diode (DIAC) designed for commercial and industrial applications. It features a peak current rating of ±2 A, a maximum power dissipation of 150 mW, and a thermal resistance junction to ambient of less than 300 K/W. The device operates within a temperature range of -40°C to +100°C. Breakover voltage options include 32 V, 34 V, and 40 V, with a breakover voltage difference of 5 V. It is housed in an axial leaded package.
Verify the specific breakover voltage variant required for your design, as the product line includes distinct models such as DB3, DB31, DB32, and DB4. Confirm that the component meets the necessary environmental compliance standards for your target market. Ensure mechanical fitment aligns with the axial leaded package dimensions provided in the official datasheet before finalizing procurement specifications.
Select the appropriate model based on the required breakover voltage: DB3 for 32 V, DB31 for 34 V, or DB32 for 40 V. Consider the thermal environment, as the thermal resistance is valid only if leads are kept at ambient temperature at a distance of 10 mm from the case. Ensure the application does not exceed the maximum junction temperature of 100°C during operation.
The DB3 belongs to Diotec's family of bidirectional silicon trigger diodes, which also includes the DB31, DB32, and DB4 variants. These components are categorized under standard commercial/industrial grade semiconductors intended for general-purpose triggering applications. They share similar mechanical data and packaging characteristics within this specific product series.
Cross-reference with other manufacturers' DIACs offering identical breakover voltages and current ratings. Verify that alternative components match the axial leaded package dimensions and thermal resistance characteristics to ensure compatibility with existing PCB layouts and thermal management designs.