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The DCX100NS-7 is a dual pre-biased transistor array from Diodes Incorporated, housed in an SOT-563 package. It integrates one PNP and one NPN transistor with built-in biasing resistors. The PNP pass transistor supports a continuous collector current of 100 mA with a supply voltage of -50 V. The NPN control switch operates at a maximum supply voltage of 50 V and a peak output current of 50 mA. Total power dissipation is rated at 150 mW. Typical input resistors are 1 kΩ for the PNP base and 10 kΩ for both the NPN emitter and collector paths. The device features a gain-bandwidth product of 250 MHz and operates within a junction temperature range of -55°C to +150°C.
This component is officially marked as obsolete and discontinued by the manufacturer. Verification of availability requires direct contact with Diodes Incorporated or authorized distributors, as standard inventory channels may not stock this part. Engineering teams should prioritize alternative components due to the discontinuation status.
Select this component only if legacy compatibility with the DCX100 series is required. Verify that the SOT-563 footprint matches the existing PCB layout. Confirm that the 100 mA current rating and 150 mW power dissipation meet the specific thermal and load requirements of the application before finalizing the design.
The DCX100NS-7 belongs to the DCX100 series of dual pre-biased transistors manufactured by Diodes Incorporated. This series combines NPN and PNP devices in a single compact package to reduce board space and simplify biasing networks. The -7 suffix indicates tape and reel packaging for surface mount technology.
No public confirmed substitute part numbers are available in the provided documentation. Due to the obsolete status, engineers must identify equivalent dual pre-biased transistors with matching pinouts and electrical characteristics through independent cross-reference tools.
The maximum continuous collector current for the PNP pass transistor is 100 mA.
The gain-bandwidth product is typically 250 MHz under specified test conditions.
The device supports an operating and storage junction temperature range from -55°C to +150°C.