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The DCX114TH-7 is a complementary NPN/PNP pre-biased small signal transistor array manufactured by Diodes Incorporated. It integrates two transistors with built-in biasing resistors in an SOT563 package. The device features a maximum supply voltage of 50V and a continuous collector current of 100mA. Total power dissipation is rated at 150mW, with an operating temperature range from -55°C to +150°C. Electrical characteristics include a minimum DC current transfer ratio (hFE) of 100 and a gain-bandwidth product of 250MHz. The typical input resistor values are R1=10kΩ and R2=47kΩ.
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable environmental directives relevant to the target market. Ensure that the supplier provides valid traceability documentation for quality assurance purposes. Cross-reference the manufacturer part number against official distributor catalogs to confirm authenticity and availability status.
Select this component when a compact solution for complementary switching is required. The integrated resistors simplify circuit design compared to discrete transistor pairs. Verify that the thermal resistance and power dissipation limits accommodate the expected load conditions. Ensure the input voltage ratings align with the driving logic levels used in the application circuit.
This component belongs to the DCX series of complementary pre-biased transistors. It shares the same epitaxial planar construction and SOT563 package form factor as other members of the family. Variations within the series typically involve different internal resistor ratios or specific electrical parameter tolerances while maintaining identical physical dimensions.
DCX114EH-7
For the DCX114TH-7, the typical resistor values are R1 = 10kΩ and R2 = 47kΩ.
The total power dissipation (PD) for the DCX114TH-7 is rated at 150 mW.
Yes, the operating and storage temperature range extends up to +150°C.