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The DCX114YUQ-13-F is a complementary pre-biased transistor array manufactured by Diodes Incorporated, housed in an SOT363 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor with built-in biasing resistors (R1 = 10 kΩ, R2 = 47 kΩ). The device supports a supply voltage of 50V, offers a peak output current of 100mA, and features a gain-bandwidth product of 250MHz. Designed for automated assembly, it operates within a temperature range of -55°C to +150°C and delivers a maximum power dissipation of 200mW.
Verify the ordering suffix '13-F' corresponds to the 10,000-unit reel quantity before procurement. Confirm that the 'Q' designation aligns with automotive qualification requirements if applicable to the target application. Ensure compatibility with standard SMT reflow processes given the SOT363 package specifications.
Select this component when a matched NPN/PNP pair with fixed 10kΩ/47kΩ biasing ratios is required in a compact footprint. Consider the 50V collector-emitter breakdown voltage and 100mA continuous current limits against load requirements. Evaluate thermal derating curves if operating near the upper temperature limit or exceeding 150mW per element.
This part belongs to the DCX114 series of complementary pre-biased transistors from Diodes Incorporated. It shares the same electrical characteristics as the DCX114YU but differs in packaging quantity and automotive qualification status. The 'Q' suffix indicates compliance with stricter automotive quality standards compared to non-qualified variants.
The datasheet explicitly lists DCX114YUQ-7-F as Not Recommended for New Design (NRND) and recommends using ACX114YUQ as the direct replacement. Verify pinout and electrical parameters match when substituting with other DCX series variants like DCX114EU.
The DCX114YUQ-13-F includes a base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 47 kΩ.
Yes, the DCX114YUQ variant is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The total power dissipation is 200mW, but no more than 150mW should be exceeded per individual element.