SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DCX115EK-7-F is a dual complementary pre-biased transistor from Diodes Incorporated, housed in an SOT26 (SOT-363) surface-mount package. It integrates one NPN and one PNP epitaxial planar die with built-in biasing resistors of 100 kΩ each. The device supports a maximum supply voltage of 50 V and a continuous collector current of 100 mA per section. Total power dissipation is rated at 300 mW, with an operating temperature range spanning -55°C to +150°C. The component features a transition frequency of 250 MHz and complies with RoHS 3 standards.
Verify the active status and compliance markings before procurement. Confirm that the SOT26 footprint matches the PCB layout requirements. Ensure the 100 kΩ resistor values align with the specific drive current needs of the target application. Check for any automotive qualification requirements if the end-use involves IATF 16949 certified facilities.
Select this component when a complementary pair with matched 100 kΩ base resistors is required in a compact SOT26 package. Consider the 300 mW total power dissipation limit when designing thermal management strategies. Verify that the 50 V breakdown voltage meets the system's maximum supply requirements. Evaluate the 250 MHz transition frequency against the intended signal speeds.
This part belongs to the DCX115 series of dual complementary pre-biased transistors. It shares the same internal configuration as other variants in the family but differs in resistor values and packaging suffixes. The 'EK' designation specifically indicates the 100 kΩ/100 kΩ resistor combination within the SOT26 case.
DCX115EU-7-F
Both the NPN and PNP sections feature built-in biasing resistors with a nominal value of 100 kΩ.
Yes, the device is rated for an operating junction temperature range of -55°C to +150°C.
The maximum continuous collector current is 100 mA for both the NPN and PNP sections.