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The DCX115EU-7-F is a complementary pre-biased transistor array from Diodes Incorporated, featuring one NPN and one PNP element in an SOT363 package. It operates with a supply voltage of 50V and supports a continuous collector current of 100mA per section. The device integrates nominal bias resistors of 100kΩ for both the base (R1) and emitter (R2). Key electrical characteristics include a minimum DC current gain (hFE) of 82 at 5mA/5V, a maximum collector-emitter saturation voltage of 300mV, and a transition frequency of 250MHz. Power dissipation is rated at 200mW.
Verify component authenticity by checking the manufacturer's datasheet revision history and ordering information table. Confirm that the specific suffix matches the requested packing quantity and reel size specifications. Ensure compliance with environmental directives such as RoHS 3 and halogen-free requirements before finalizing procurement orders.
Select this component when a matched NPN/PNP pair with identical 100kΩ bias resistors is required. Verify that the 50V breakdown voltage and 100mA current limits satisfy the application load conditions. Consider the SOT363 thermal resistance and power derating curves if operating near the maximum temperature range.
This part belongs to the DCX series of complementary pre-biased transistors manufactured by Diodes Incorporated. The series offers various resistor combinations and configurations in small outline packages designed for space-constrained printed circuit board layouts.
Direct substitutes within the same family include other DCX variants with matching polarity and similar resistor values. Cross-referencing the absolute maximum ratings and pinout compatibility is essential when evaluating alternative components.