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The DCX124EU-7-F is a complementary pre-biased transistor array from Diodes Incorporated, housed in an SOT363 package. It integrates one NPN and one PNP bipolar junction transistor with internal biasing resistors (R1=22kΩ, R2=22kΩ). The device supports a supply voltage of 50V and handles continuous collector currents up to 100mA per element. Key electrical parameters include a minimum DC current gain (hFE) of 100, a peak output current of 100mA, and a power dissipation rating of 200mW. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the selected variant matches the required resistor values and packaging specifications. Ensure compliance with relevant environmental directives such as RoHS and REACH requirements applicable to your region.
Select this component when a matched NPN/PNP pair with integrated biasing is required in a small footprint. Verify that the 22kΩ internal resistor values align with the target input drive levels. Consider thermal derating curves if operating near maximum power dissipation limits or elevated ambient temperatures.
This part belongs to the DCX series of 50V complementary pre-biased transistors. It shares the SOT363 mechanical outline with other variants like the DCX144EU and DCX114EU, which differ primarily in their internal resistor configurations. The 'U' suffix denotes the standard plastic package material.
The datasheet explicitly identifies the DCX124EUQ-7-F as Not Recommended for New Design (NRND) and directs users to use the ACX124EUQ instead. Direct substitution with other DCX series parts requires verification of matching resistor ratios and polarity configurations.
For the DCX124EU variant, both the base resistor (R1) and emitter resistor (R2) have nominal values of 22kΩ.
Standard versions are not specified for automotive use. However, the Q-series variants (e.g., DCX124EUQ) are AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.
The total power dissipation is 200mW, but no more than 150mW should be exceeded per individual element.