DDA113TU-7-F

Overview

The DDA113TU-7-F is a PNP pre-biased dual transistor manufactured by Diodes Incorporated in the SOT363 package. It features built-in biasing resistors with a nominal value of 1 kΩ for R1. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 200 mW, with a thermal resistance of 625 °C/W. The gain-bandwidth product is typically 250 MHz. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

• Epitaxial planar die construction
• Built-in biasing resistors
• Totally lead-free and fully RoHS compliant
• Halogen and antimony free

Applications

• Automotive applications requiring specific change control
• High reliability circuits
• Surface mount PCB designs

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status and date code markings against official documentation. Ensure packaging specifications match design requirements. Validate electrical parameters under intended operating conditions before integration.

Selection Notes

Select this component for dual PNP switching applications requiring integrated biasing. Verify resistor tolerance and gain-bandwidth product suitability for high-frequency operations. Consider thermal constraints when designing for maximum power dissipation limits.

Part Context

Part of the DDA(XXXX)U series of PNP pre-biased dual transistors. Complementary NPN types are available in the DDC series. Manufactured in IATF 16949 certified facilities for automotive grade variants.

Replacement Considerations

DDA113TUQ-7-F is an active alternative within the same series. Check marking codes and packaging details for compatibility.