DDA114EU-7-F

Overview

The DDA114EU-7-F is a PNP pre-biased dual transistor manufactured by Diodes Incorporated, housed in an SOT363 package. It features built-in biasing resistors with nominal values of R1 = 10 kΩ and R2 = 10 kΩ. The device has a collector-emitter breakdown voltage (BVCEO) of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 200 mW, with a gain-bandwidth product of 250 MHz. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Epitaxial planar die construction for reliable performance
• Integrated biasing resistors simplify circuit design
• Totally lead-free and fully RoHS compliant
• Halogen and antimony free green device

Applications

• Switching applications requiring dual PNP transistors
• Driver circuits for logic interfaces
• General purpose amplification stages

Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the standard reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 3 compliance, before finalizing procurement specifications for production runs.

Selection Notes

Select this component when a dual PNP configuration with integrated base and emitter resistors is required. Ensure the -50V collector-emitter voltage rating and -100mA current capacity align with the target application's electrical demands and thermal constraints within the SOT363 footprint.

Part Context

This part belongs to the DDA series of pre-biased dual transistors from Diodes Incorporated. It serves as a compact solution for replacing discrete resistor-transistor networks, saving board space and assembly time compared to individual components.

Replacement Considerations

Check for direct equivalents such as the DDC114EU-7-F if NPN polarity is needed instead. Verify pinout compatibility and electrical parameters against other SOT363 dual PNP transistors from different manufacturers before substitution.