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The DDA114TH-7 is a PNP pre-biased small signal dual surface mount transistor manufactured by Diodes Incorporated. It features built-in biasing resistors with nominal values of R1=10kΩ and R2=47kΩ. The device operates within a supply voltage range of -50V to +5V (max) and supports a continuous collector current of -100mA. Electrical characteristics include a DC current transfer ratio (hFE) ranging from 100 to 600 at IC=-1mA, VCE=-5V, and a gain-bandwidth product (fT) of 250MHz. Power dissipation is rated at 150mW with a thermal resistance of 833°C/W. It utilizes an SOT563 package and complies with AEC-Q101 standards.
Verify the component against the official Diodes Incorporated datasheet DS30420 Rev. 6. Confirm the marking code P12 on the SOT563 package matches the DDA114TH-7 specification. Ensure compliance with RoHS and AEC-Q101 requirements if used in regulated or automotive environments. Check for any recent production change notices regarding wafer sources or bond wire materials.
Select this component when a dual PNP digital transistor with specific 10kΩ/47kΩ resistor ratios is required. Compare electrical parameters such as hFE and fT against alternative models like DDC114 series if NPN polarity is needed. Consider the SOT563 footprint constraints and verify thermal dissipation capabilities relative to the application's power budget.
This part belongs to the DDAxxxxH series of PNP pre-biased transistors from Diodes Incorporated. It is complementary to the DDC114 series, which offers NPN configurations. The 'H' suffix indicates the specific package type and internal resistor configuration defined in the manufacturer's catalog.
Direct substitutes within the same family include DDA114EH-7 and DDA114YH-7, provided their respective resistor values match the circuit requirements. Verify pinout compatibility and electrical ratings before substitution.
For the DDA114TH-7, the nominal resistor values are R1 = 10kΩ and R2 = 47kΩ.
Yes, the DDA114TH-7 is qualified to AEC-Q101 standards for high reliability.
The maximum power dissipation (PD) is 150 mW at an ambient temperature of +25°C.