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The DDA114TU-7-F is a PNP pre-biased dual transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and integrates built-in biasing resistors within an SOT363 package. The device operates with a collector-emitter breakdown voltage of -50 V and supports a continuous collector current of -100 mA. Each internal transistor includes a nominal input resistor (R1) of 10 kOhms. Power dissipation is rated at 200 mW, with a thermal resistance of 625 °C/W. The component functions across an operating temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the selected variant matches the required resistor values and package type. Ensure compliance with relevant environmental directives such as RoHS 3. Check for any recent product change notifications or lifecycle status updates directly from the supplier.
Select this component when a dual PNP configuration with integrated biasing is required in a small footprint. Verify that the 10 kOhm input resistor value aligns with the target drive current and logic levels. Consider the SOT363 package dimensions for PCB layout constraints. Evaluate thermal requirements to ensure power dissipation remains within the specified limits under operating conditions.
This part belongs to the DDA series of PNP pre-biased dual transistors from Diodes Incorporated. It shares the SOT363 package form factor with other variants in the family, differing primarily in internal resistor configurations. The series offers complementary NPN types available under the DDC designation. This specific model provides a standardized 10 kOhm biasing solution for dual-channel applications.
Direct substitutes within the same series include DDA114TUQ-7-F. For single-transistor applications, consider DDTA114TUA-7-F. Verify pinout compatibility and electrical parameters before substitution. Consult the manufacturer's datasheet for detailed cross-reference information.