SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDA114TU-7-F is a PNP pre-biased dual transistor in an SOT363 package. It features built-in biasing resistors with R1 nominal value of 10 kΩ and R2 nominal value of 47 kΩ. The device has a collector-emitter breakdown voltage (BVCEO) of -50 V, continuous collector current of -100 mA, and power dissipation of 200 mW. Operating temperature range is -55°C to +150°C.
Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component status is Active rather than Not Recommended for New Design. Ensure compliance with environmental directives such as RoHS 3 and REACH requirements specified by Diodes Incorporated.
Select this component when a dual PNP configuration with integrated base resistors is required. Verify resistor values match circuit design needs. Consider thermal resistance and power dissipation limits under operating conditions. Check package compatibility with PCB layout constraints.
This part belongs to the DDA series of pre-biased dual transistors manufactured by Diodes Incorporated. It shares the SOT363 package with other variants like DDC114TU and DDA124EU. The series offers complementary NPN types and various resistor combinations for different biasing requirements.
For NRND parts in the same family, ADA114YUQ or ADA114EUQ are suggested replacements. Verify pinout compatibility and electrical characteristics before substitution. Consult the latest datasheet for updated availability status.