DDA114TUQ-13-F

Overview

The DDA114TUQ-13-F is a PNP pre-biased dual transistor manufactured by Diodes Incorporated, housed in an SOT-363 package. It features built-in biasing resistors with nominal values of R1 = 10 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. This component is AEC-Q101 qualified for automotive applications.

Feature Summary

• Integrated dual PNP transistors with built-in biasing resistors
• AEC-Q101 qualified and PPAP capable for automotive use
• Totally lead-free and fully RoHS compliant

Applications

• Automotive electronic circuits requiring specific change control
• General-purpose switching applications
• Driver circuits for low-power loads

Procurement Notes

Verify the exact ordering suffix against official distributor catalogs to confirm packaging specifications. Confirm that the 'UQ' designation aligns with your project's requirement for AEC-Q101 qualification and IATF 16949 manufacturing standards before finalizing procurement orders.

Selection Notes

Select this part when a dual PNP configuration with integrated biasing is required in a compact SOT-363 footprint. Ensure the circuit design accommodates the specified -50 V collector-emitter breakdown voltage and -100 mA maximum output current limits under all operating conditions.

Part Context

This component belongs to the DDA (XXXX) U series of PNP pre-biased dual transistors. It serves as the automotive-grade variant within the family, distinguished by its AEC-Q101 qualification status compared to standard commercial versions.

Replacement Considerations

For non-automotive designs, the DDA114TU-7-F offers identical electrical characteristics but lacks automotive qualification. Verify pinout compatibility and resistor tolerances when substituting.