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Product Detailed Parameters
- Description：PREBIAS TRANSISTOR SOT363 T&R 3K
- Series：DDA (XXXX) U
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：200mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
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Overview
The DDA114TUQ-7-F is a PNP pre-biased dual transistor manufactured by Diodes Incorporated, housed in an SOT363 surface-mount package. It features built-in biasing resistors with nominal values of R1=10kΩ and R2=47kΩ. The device supports a collector-emitter voltage (VCEO) of -50V and a continuous collector current of -100mA. Power dissipation is rated at 200mW, with an operating temperature range from -55°C to +150°C. This component is AEC-Q101 qualified for automotive applications.
Feature Summary
- Epitaxial planar die construction
- Built-in biasing resistors
- AEC-Q101 qualified for automotive use
Applications
- Automotive applications requiring specific change control
- General-purpose switching circuits
- Driver circuits for low-power loads
Procurement Notes
Verify the part number against official manufacturer documentation to confirm the 'Q' suffix indicates AEC-Q101 qualification and IATF 16949 manufacturing compliance. Ensure that the specific resistor ratios match the design requirements before procurement.
Selection Notes
Select this component when a dual PNP configuration with integrated biasing is required in a compact SOT363 footprint. Verify that the -50V breakdown voltage and -100mA current limits align with the circuit's maximum operating conditions.
Part Context
This part belongs to the DDA(XXXX)U series of PNP pre-biased dual transistors. It is functionally similar to the DDA114TU-7-F but includes the 'Q' suffix denoting automotive-grade qualification and PPAP capability.
Replacement Considerations
The datasheet lists the DDA114YUQ-7-F as Not Recommended for New Design (NRND), suggesting the ADA114YUQ as a potential alternative. Direct substitution requires verifying pinout compatibility and electrical parameter alignment.
FAQ
What are the nominal values of the internal biasing resistors?
The typical nominal values are R1 = 10kΩ and R2 = 47kΩ.
Is this component suitable for automotive applications?
Yes, the DDA114TUQ-7-F is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
What is the maximum power dissipation rating?
The total power dissipation is 200mW, with a limit of 150mW per element.
