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The DDA114YH-7 is a PNP pre-biased small signal dual surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and integrates built-in biasing resistors within an SOT563 case. The device features a nominal input resistor (R1) of 10 kOhms and a typical resistor ratio of 0.212. Key electrical parameters include a maximum supply voltage (VCC) of -50 V, a power dissipation (PD) of 150 mW, and a collector continuous current of 100 mA. The DC current gain (hFE min) is specified at 68. Operating temperatures range from -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm compliance with specific environmental directives such as RoHS and REACH requirements relevant to the target market. Ensure storage conditions adhere to moisture sensitivity level guidelines to maintain solderability and prevent package damage during assembly processes.
Select this component when a PNP dual configuration with specific 10kOhm biasing is required in a compact SOT563 footprint. Consider the 150mW power dissipation limit and -50V voltage rating against circuit demands. Verify that the minimum DC current gain of 68 meets the drive requirements for the intended load application.
This part belongs to the DDA series of PNP pre-biased transistors from Diodes Incorporated. It shares the SOT563 package form factor with other variants like the DDC114YH-7, which offers complementary NPN characteristics. The 'H' suffix denotes the specific SOT563 casing used across this product family.
Direct substitutes within the same series include DDA114EH-7 and DDA114TH-7, though these feature different resistor values. For complementary NPN functionality, the DDC114YH-7 serves as the corresponding variant. Verify pinout compatibility and electrical ratings before substitution.