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The DDA114YU-7-F is a PNP pre-biased dual transistor in an SOT363 package. It features built-in biasing resistors with nominal values of R1=10kΩ and R2=47kΩ. The device has a collector-emitter breakdown voltage (BVCEO) of -50V, a continuous collector current (IC) of -100mA, and a power dissipation (PD) of 200mW. It operates within a temperature range of -55°C to +150°C.
Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component status matches design requirements, as some variants may be marked as Not Recommended for New Design (NRND). Ensure compliance with environmental directives such as RoHS 3 and REACH when sourcing.
Select this component for designs requiring a compact dual PNP solution with integrated biasing resistors. Verify that the required resistor ratios align with the specific part number variant. Consider thermal resistance and power dissipation limits when designing for high ambient temperatures or dense PCB layouts.
This component belongs to the DDA series of PNP pre-biased dual transistors manufactured by Diodes Incorporated. It is designed to replace discrete resistor networks and individual transistors, reducing board space and assembly costs. The complementary NPN type is available in the DDC series.
For the NRND variant DDA114YUQ-7-F, the datasheet recommends using ADA114YUQ as a replacement.