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The DDA123JK-7-F is a digital transistor manufactured by Diodes Incorporated, classified as a pre-biased NPN device. It integrates internal biasing resistors to simplify circuit design and reduce component count. The component features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 300 mW. Typical input resistance is 2.2 kOhms with a resistor ratio of 0.047. It is housed in an SOT-323-3 surface-mount package and operates within a temperature range of -55°C to +150°C.
Verify end-of-life status before finalizing designs, as the manufacturer has issued discontinuance notifications. Confirm availability through authorized distributors, noting that stock may be limited or subject to long lead times due to production phase-out. Validate RoHS compliance documentation against specific batch codes prior to procurement.
Select this component when a single PNP digital transistor with integrated biasing is required in an SOT-323-3 package. Ensure the 50 V collector-emitter voltage and 100 mA current ratings meet the application's electrical demands. Verify that the 300 mW power dissipation capability is sufficient for the intended thermal environment.
This part belongs to the DDA123 series of digital transistors from Diodes Incorporated. The series offers various configurations including dual and single types in different packages. The DDA123JK-7-F specifically denotes the NPN variant with specific resistor values and the -7-F suffix indicating tape and reel packaging.
Check for direct substitutes within the same series such as DDA123JH-7 or other NPN digital transistors with similar pinouts and electrical characteristics. Verify package compatibility and resistor ratios when selecting alternative components.