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The DDA123JU-7-F is a PNP pre-biased dual transistor manufactured by Diodes Incorporated, housed in an SOT-363 package. It integrates two PNP transistors with built-in biasing resistors (R1 = 2.2 kΩ, R2 = 47 kΩ). The device features a collector-emitter breakdown voltage of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 200 mW, with a thermal resistance of 625 °C/W. Operating temperature ranges from -55°C to +150°C. DC current gain is typically 80 at -10 mA collector current.
Verify the component status as Active before procurement. Confirm that the ordering suffix matches the required reel size and tape width specifications. Ensure compliance with environmental directives such as RoHS 3 and lead-free requirements during sourcing. Cross-reference the date code key to validate manufacturing timelines against project schedules.
Select this component when a dual PNP configuration with integrated biasing is required in a compact SOT-363 footprint. Compare the 2.2 kΩ input resistor value against circuit drive requirements. Verify that the -50 V breakdown voltage meets the system's supply voltage constraints. Consider the 200 mW power dissipation limit for thermal management in dense layouts.
This part belongs to the DDA series of pre-biased dual transistors from Diodes Incorporated. It shares the SOT-363 package form factor with other variants like the DDC series (NPN) and different resistor ratio models within the DDA family. The 'U' suffix indicates the SOT-363 package type.
For NPN equivalents, consider the DDC series. For single transistor options, evaluate the DDTA or DDTB series. Direct pin-compatible replacements within the same manufacturer may include other DDA variants with similar resistor ratios if electrical parameters align.