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The DDA123JU-7-F is a PNP pre-biased dual transistor manufactured by Diodes Incorporated, housed in an SOT-363 package. It integrates two internal biasing resistors with nominal values of R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -40 V and a continuous collector current of -100 mA. Power dissipation is rated at 200 mW, with a minimum DC current gain (hFE) of 80. Operating temperature ranges from -55°C to +150°C.
Verify the complete part number including suffixes such as -7-F against official manufacturer documentation before procurement. Confirm that the specific ordering code matches the required packaging quantity and reel specifications. Ensure compliance with RoHS directives and environmental requirements relevant to the target application region.
Select this component when a compact dual PNP solution with fixed biasing is required. Verify that the -40 V collector-emitter voltage rating meets the circuit's supply requirements. Check that the 2.2 kΩ input resistor value provides appropriate base drive current for the intended load conditions without exceeding power dissipation limits.
This component belongs to the DDA series of pre-biased transistors designed for space-constrained designs. It serves as a complementary counterpart to NPN types within the same family. The SOT-363 package allows for high-density PCB layouts while maintaining electrical performance suitable for consumer and industrial electronics.
Direct substitutes include other DDA123 variants with identical resistor ratios but different packages, such as DDA123JH-7 in SOT-563. Cross-reference with DDC123JU-7-F if an NPN configuration is acceptable. Verify pinout compatibility and thermal characteristics when replacing with components from other manufacturers.