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The DDC114EH-7 is a dual NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features built-in biasing resistors with R1 and R2 both set to 10 kΩ. The device operates with a maximum supply voltage of 50 V and a continuous collector current of 50 mA, while the total output current for all transistors is limited to 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 30 at 5 mA and 5 V, and a collector-emitter saturation voltage maximum of 0.3 V under specified conditions. The component has a power dissipation rating of 150 mW and a transition frequency of 250 MHz. It is housed in an SOT-563 package.
Verify that the ordering suffix matches the required packaging format. Confirm compliance with specific environmental directives if applicable to the target market. Ensure the component version aligns with the latest datasheet revision to avoid discrepancies in electrical parameters or marking codes during assembly.
Select this component when a dual NPN pre-biased transistor with 10 kΩ internal resistors is required. Compare against complementary PNP types like the DDA series if push-pull configurations are needed. Verify that the 50 mA collector current limit meets the load requirements and that the SOT-563 package fits the available board space.
This part belongs to the DDC (XXXX) H series of NPN pre-biased small signal dual surface mount transistors from Diodes Incorporated. The series includes various resistor combinations and current ratings, distinguished by their alphanumeric markings. The 'H' designation indicates the specific package type and electrical characteristics defined in the DS30421 datasheet.
Direct substitutes within the same series include DDC114TH-7 and DDC114YH-7, which share the SOT-563 package but differ in internal resistor values. Complementary PNP versions such as DDA114EH-7 are available for differential signaling applications.