SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDC114EUQ-7-F is a dual NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an SOT-363 package. The device integrates built-in biasing resistors, with both R1 and R2 nominally set to 10 kΩ. Key electrical specifications include a collector-emitter breakdown voltage (BVCEO) of 50 V, a continuous collector current (IO) of 100 mA, and a transition frequency (fT) of 250 MHz. It features a maximum power dissipation of 200 mW and operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm the part status as Not Recommended for New Design (NRND) before finalizing procurement plans. Ensure compliance with RoHS directives and verify packaging details against official Diodes Incorporated documentation prior to ordering.
Select this component for designs requiring dual NPN transistors with fixed internal biasing networks. Verify that the 10 kΩ resistor values align with input drive requirements. Consider the NRND status when planning long-term production runs. Evaluate thermal performance against the 200 mW dissipation limit under expected operating conditions.
This component belongs to the DDC(XXXX)U series of pre-biased transistors from Diodes Incorporated. It shares the SOT-363 package form factor with other variants in the family but differs in internal resistor configurations and transistor gain characteristics. The 'Q' suffix indicates automotive qualification standards.
Official datasheet documentation lists ADC114EUQ as the recommended replacement for the DDC114EUQ-7-F due to its NRND status.