DDC114TH-7

DDC114TH-7

$0.38
  • Description:TRANS 2NPN PREBIAS 0.15W SOT563
  • Series:-

SKU:7e679dcdd816 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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DDC114TH-7

Overview

The DDC114TH-7 is a dual NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features built-in biasing resistors with values of R1=10kΩ and R2=10kΩ, housed in an SOT-563 package. The device supports a maximum supply voltage (VCC) of 50V and a continuous output current (IO) of 100mA. Power dissipation is rated at 150mW, with a thermal resistance (RθJA) of 833°C/W. Electrical characteristics include a collector-emitter breakdown voltage (BVCEO) of 50V, a DC current transfer ratio (hFE) minimum of 100, and a gain-bandwidth product (fT) typical value of 250MHz. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Epitaxial planar die construction for reliable performance
  • Integrated biasing resistors simplify circuit design
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free green device

Applications

  • Switching applications requiring integrated biasing
  • Driver circuits for low-power loads
  • General-purpose digital logic interfacing

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status, as defined by the manufacturer's quality definitions. Ensure the SOT-563 package dimensions align with the PCB footprint layout specifications provided in the application notes.

Selection Notes

Select this component when a dual NPN configuration with fixed 10kΩ base and emitter resistors is required. The 100mA output current capability and 50V breakdown voltage make it suitable for standard low-voltage switching tasks. Consider the 150mW power dissipation limit and 833°C/W thermal resistance for thermal management planning in dense layouts.

Part Context

This part belongs to the DDC(XXXX)H series of NPN pre-biased transistors from Diodes Incorporated. It is functionally complementary to the DDA series PNP types. The 'H' suffix indicates the SOT-563 package variant. Other parts in this family share similar electrical structures but vary in resistor values and current ratings.

Replacement Considerations

Direct replacements within the same family include DDC114EH-7 or DDC114YH-7, provided their specific resistor ratios match the circuit requirements. Verify that any substitute maintains the SOT-563 package and equivalent electrical parameters such as BVCEO and IO.

FAQ

What are the specific values of the built-in biasing resistors for the DDC114TH-7?

The DDC114TH-7 has a base resistor (R1) of 10kΩ and an emitter resistor (R2) of 10kΩ.

What is the maximum power dissipation rating for this device?

The maximum power dissipation (Pd) is 150mW at an ambient temperature of +25°C.

Is the DDC114TH-7 suitable for high-frequency applications?

Yes, it has a typical gain-bandwidth product (fT) of 250MHz, making it suitable for certain high-speed switching applications.

DDC114TH-7DDC114TH-7
$0.38
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