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The DDC114TH-7 is a dual NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features built-in biasing resistors with values of R1=10kΩ and R2=10kΩ, housed in an SOT-563 package. The device supports a maximum supply voltage (VCC) of 50V and a continuous output current (IO) of 100mA. Power dissipation is rated at 150mW, with a thermal resistance (RθJA) of 833°C/W. Electrical characteristics include a collector-emitter breakdown voltage (BVCEO) of 50V, a DC current transfer ratio (hFE) minimum of 100, and a gain-bandwidth product (fT) typical value of 250MHz. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status, as defined by the manufacturer's quality definitions. Ensure the SOT-563 package dimensions align with the PCB footprint layout specifications provided in the application notes.
Select this component when a dual NPN configuration with fixed 10kΩ base and emitter resistors is required. The 100mA output current capability and 50V breakdown voltage make it suitable for standard low-voltage switching tasks. Consider the 150mW power dissipation limit and 833°C/W thermal resistance for thermal management planning in dense layouts.
This part belongs to the DDC(XXXX)H series of NPN pre-biased transistors from Diodes Incorporated. It is functionally complementary to the DDA series PNP types. The 'H' suffix indicates the SOT-563 package variant. Other parts in this family share similar electrical structures but vary in resistor values and current ratings.
Direct replacements within the same family include DDC114EH-7 or DDC114YH-7, provided their specific resistor ratios match the circuit requirements. Verify that any substitute maintains the SOT-563 package and equivalent electrical parameters such as BVCEO and IO.
The DDC114TH-7 has a base resistor (R1) of 10kΩ and an emitter resistor (R2) of 10kΩ.
The maximum power dissipation (Pd) is 150mW at an ambient temperature of +25°C.
Yes, it has a typical gain-bandwidth product (fT) of 250MHz, making it suitable for certain high-speed switching applications.