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The DDC114TU-7-F is a dual NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and integrates built-in biasing resistors within an SOT363 package. The device supports a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 200 mW. Each transistor includes a single 10 kOhm input resistor (R1). Electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = 1mA and VCE = 5V, with a transition frequency of 250 MHz. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and reel specifications. Confirm that the component status remains active for new designs, as obsolete or not recommended for new design (NRND) statuses may affect long-term availability. Cross-reference the marking code 'N12' to validate authenticity upon receipt.
Select this component when a dual NPN configuration with a single 10 kOhm base resistor per element is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Consider the thermal resistance of 625 °C/W and the 200 mW total power dissipation limit when designing heat management strategies for the SOT363 package.
This part belongs to the DDC(XXXX)U series of NPN pre-biased transistors. It shares the SOT363 mechanical footprint with other variants like DDC113TU and DDC143TU but differs in internal resistor values and electrical ratings. The 'TU' suffix indicates the specific resistor configuration and package type within the broader DDC family.
Direct functional substitutes within the same series include DDC113TU-7-F and DDC143TU-7-F, provided their respective resistor values match the circuit requirements. For automotive applications requiring AEC-Q101 qualification, consider the DDC114TUQ-7-F variant.