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The DDC114TU-7 is a dual NPN pre-biased small signal transistor from Diodes Incorporated, housed in an SOT-363 surface-mount package. It features built-in biasing resistors with R1 at 10 kOhms and R2 at 47 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Total power dissipation is rated at 200 mW, with a thermal resistance of 625 °C/W. Operating temperature ranges from -55 °C to +150 °C. DC current gain (hFE) is specified between 100 and 600 at IC = 1 mA, VCE = 5 V.
Verify the specific ordering suffix against manufacturer documentation to confirm compliance requirements. The base part number indicates standard plating; add the '-F' suffix for lead-free/RoHS compliant versions as defined in the datasheet ordering information. Confirm tape and reel quantities match production needs.
Select this component when a dual NPN array with fixed internal biasing is required. Ensure the 10 kOhm input resistor value aligns with drive source capabilities. Verify that the 200 mW total power dissipation limit accommodates thermal constraints within the target operating environment.
This component belongs to the DDC (xxxx) U series of pre-biased transistors. Complementary PNP types are available under the DDA prefix. The series utilizes epitaxial planar technology and is designed for surface-mount assembly in space-constrained electronic designs.
DDC114TU-7-F serves as the lead-free/RoHS compliant equivalent. Other variants within the DDC114 family differ by resistor values or package type.