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The DDC114TUQ-7-F is a dual NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and integrates built-in biasing resistors within a compact SOT363 package. The device is AEC-Q101 qualified for automotive applications and operates with a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. Power dissipation is rated at 200mW, with a transition frequency of 250MHz. It includes a nominal base resistor (R1) of 10kΩ and functions across a temperature range from -55°C to +150°C.
Verify the component status as active before procurement. Confirm that the Q suffix indicates AEC-Q101 qualification and IATF 16949 manufacturing compliance. Ensure the ordering suffix matches the required reel size and tape width specifications for automated assembly processes.
Select this component when a dual NPN array with a 10kΩ base resistor is required. Compare against the DDC114EUQ-7-F if a 10kΩ/10kΩ resistor configuration is needed instead of the single R1 setup. Verify that the SOT363 footprint aligns with the PCB layout constraints.
This part belongs to the DDC(XXXX)U series of pre-biased transistors. It shares the same physical package and general electrical characteristics as other variants in the family, distinguished primarily by the internal resistor values and specific automotive qualification status indicated by the Q suffix.
The datasheet lists the DDC114YUQ-7-F as Not Recommended for New Design (NRND) and explicitly recommends using the ADC114YUQ as a replacement. Verify compatibility with the ADC114YUQ if sourcing alternatives are necessary.
The nominal value of the base resistor (R1) is 10kΩ.
Yes, the DDC114TUQ-7-F is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.
The maximum power dissipation is 200mW, with a limit of 150mW per element.