DEMD48-7

Overview

The DEMD48-7 is a dual pre-biased transistor in an SOT-563 package, integrating one NPN and one PNP epitaxial planar die. The NPN transistor (Q1) features a nominal input resistance of 47 kΩ with a 47 kΩ bias resistor, while the PNP transistor (Q2) has a 2.2 kΩ input resistance paired with a 47 kΩ bias resistor. It supports a maximum collector-emitter voltage of ±50 V and continuous collector current of ±100 mA. Total power dissipation is rated at 300 mW, operating within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in biasing resistors to simplify circuit design.
• Utilizes surface mount SOT-563 packaging optimized for automated assembly processes.
• Constructed using epitaxial planar die technology for reliable performance.

Applications

• General-purpose switching applications requiring complementary logic levels.
• Driver circuits for low-power loads utilizing integrated bias networks.
• Space-constrained designs benefiting from reduced component count and board area.

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the device marking code aligns with the intended production timeline. Ensure compliance with RoHS standards if lead-free composition is mandatory for the target assembly process. Cross-reference the datasheet revision to validate electrical characteristics against current manufacturing specifications.

Selection Notes

Select this component when a matched pair of NPN and PNP switches with distinct bias ratios is required. The Q1 configuration suits standard logic interfacing, whereas Q2 provides higher drive capability due to lower base resistance. Evaluate thermal constraints carefully as the junction-to-ambient resistance is high in small packages. Verify input voltage limits to prevent breakdown during transient conditions.

Part Context

This part belongs to Diodes Incorporated's portfolio of pre-biased discrete transistors designed to replace multiple external components. It consolidates biasing networks directly onto the silicon die, reducing parasitic effects and improving switching consistency compared to discrete resistor-transistor combinations.

Replacement Considerations

Direct replacements must match the SOT-563 footprint and internal resistor values. Verify pinout compatibility between the NPN and PNP sections. Check saturation voltages and current gains to ensure equivalent switching performance in the target application.