SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DF100R07W1H5FPB53BPSA2 is a dual IGBT module from Infineon's TRENCHSTOP™ 5 H5 series, featuring CoolSiC™ diodes. It provides a collector-emitter voltage of 650 V and an implemented collector current of 50 A. The continuous DC collector current reaches 40 A at 25°C and 25 A at 100°C base temperature. The repetitive peak collector current is 100 A. The module utilizes PressFIT technology and includes pre-applied thermal interface material.
Verify the specific ordering suffix B53 to confirm the inclusion of pre-applied thermal interface material and PressFIT contacts. Ensure that the procurement documentation matches the exact datasheet version referenced for electrical characteristics. Confirm compliance with RoHS directives as indicated in the product specifications.
Select this module for designs requiring high blocking voltage and low switching losses. Consider the 650 V rating and 50 A implemented current when sizing the power stage. Evaluate the thermal resistance values provided in the datasheet against the expected operating junction temperatures and ambient conditions.
This component belongs to the EasyPACK™ module family combined with TRENCHSTOP™ 5 H5 technology. It represents a specific configuration within Infineon's portfolio designed for efficient power conversion. The integration of silicon carbide diodes distinguishes it from standard silicon-based modules in the same series.
Direct replacements must match the 650 V rating, 50 A current capability, and EasyPACK™ form factor. Verify compatibility of the PressFIT termination style and ensure equivalent thermal resistance values are met by any alternative components.