DG411HSDJ-E3

DG411HSDJ-E3

$2.46
  • Description:IC SWITCH SPST-NCX4 35OHM 16DIP
  • Series:-

SKU:b9ba293052da Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SWITCH SPST-NCX4 35OHM 16DIP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • Switch Circuit:SPST - NC
  • Multiplexer/Demultiplexer Circuit:1:01
  • On-State Resistance (Max):35Ohm
  • Channel-to-Channel Matching (ΔRon):-
  • Voltage - Supply, Single (V+):13V ~ 44V
  • Voltage - Supply, Dual (V±):±5V ~ 20V
  • Switch Time (Ton, Toff) (Max):105ns, 80ns
  • -3db Bandwidth:-
  • Charge Injection:22pC
  • Channel Capacitance (CS(off), CD(off)):12pF, 12pF
  • Current - Leakage (IS(off)) (Max):250pA
  • Crosstalk:-88dB @ 1MHz
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:16-DIP (0.300", 7.62mm)
  • Supplier Device Package:16-PDIP
  • Number of Circuits:4
  • Grade:-
  • Qualification:-

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DG411HSDJ-E3

Overview

The DG411HSDJ-E3 is a precision monolithic quad SPST CMOS analog switch manufactured by Vishay Siliconix. It features four independent channels in a 16-pin Plastic DIP package, designed for high-speed switching of precision analog signals with low error. The device operates on dual supplies ranging from ±5 V to ±20 V or single supplies up to 44 V, supporting an analog signal range of ±15 V. Key electrical parameters include a maximum on-resistance of 35 Ω, a turn-on time of 105 ns, and a turn-off time of 90 ns at full temperature range. It draws ultra-low power (0.35 µW) and includes an epitaxial layer to prevent latchup.

Feature Summary

  • High-voltage silicon gate process with epitaxial layer for latchup prevention
  • TTL and CMOS compatible logic control
  • Break-before-make switching action to prevent signal shorting
  • Single supply capability with wide dynamic range

Applications

  • Precision automatic test equipment
  • Precision data acquisition systems
  • Communication systems
  • Battery powered industrial applications

Procurement Notes

Verify the specific suffix 'E3' confirms compliance with RoHS Directive 2002/95/EC and halogen-free status according to IEC 61249-2-21 definition. Confirm the 'DJ' suffix corresponds to the 16-Pin Plastic DIP package variant. Ensure the operating temperature range matches the 'D' suffix specification of -40 °C to +85 °C for your application requirements.

Selection Notes

Select this component when bidirectional signal switching is required with minimal distortion. The DG411HSDJ-E3 offers a balance of speed and low power consumption suitable for portable devices. Consider the 35 Ω on-resistance limit and 30 mA continuous current rating against load requirements. Verify that the 16-pin DIP footprint fits the PCB layout constraints compared to SOIC or QFN alternatives.

Part Context

This part belongs to the DG411HS series, which utilizes Vishay's high-voltage silicon gate process. The series includes variants like the DG412HS (opposite control logic) and DG413HS (mixed NO/NC). The DG411HSDJ-E3 specifically denotes the standard logic sense in a plastic DIP package with lead-free terminations.

Replacement Considerations

Public confirmed substitutes within the same family include DG411HSDJ (non-RoHS), DG411HSDY-E3 (SOIC package), and DG411HSDN-T1-E4 (QFN package). Cross-manufacturer replacements are not verified in the provided documentation.

DG411HSDJ-E3DG411HSDJ-E3
$2.46
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