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DG411HSDY-T1-E3
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Product Detailed Parameters
- Description：IC SWITCH SPST-NCX4 35OHM 16SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Circuit：SPST - NC
- Multiplexer/Demultiplexer Circuit：1:01
- On-State Resistance (Max)：35Ohm
- Channel-to-Channel Matching (ΔRon)：-
- Voltage - Supply, Single (V+)：13V ~ 44V
- Voltage - Supply, Dual (V±)：±5V ~ 20V
- Switch Time (Ton, Toff) (Max)：105ns, 80ns
- -3db Bandwidth：-
- Charge Injection：22pC
- Channel Capacitance (CS(off), CD(off))：12pF, 12pF
- Current - Leakage (IS(off)) (Max)：250pA
- Crosstalk：-88dB @ 1MHz
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：16-SOIC
- Number of Circuits：4
- Grade：-
- Qualification：-
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Overview
The DG411HSDY-T1-E3 is a precision monolithic quad SPST CMOS analog switch manufactured by Vishay Siliconix. It features four independent switches in a 16-pin narrow SOIC package, designed for high-speed and low-error signal switching. The device supports dual supply voltages up to ±20 V (±15 V typical) or single supplies up to 44 V, with an analog signal range of ±15 V. Key electrical parameters include a maximum on-resistance of 35 Ω at room temperature, a turn-on time of 105 ns, and a turn-off time of 80 ns. It operates within a temperature range of -40 °C to +85 °C.
Feature Summary
- High-voltage silicon gate process construction with epitaxial layer preventing latchup
- TTL and CMOS logic compatible control interface
- Break-before-make switching action to prevent signal shorting
- Ultra-low power dissipation suitable for battery-powered systems
Applications
- Precision automatic test equipment
- Precision data acquisition systems
- Communication systems
- Battery powered portable devices
- Computer peripherals
Procurement Notes
Verify the specific suffix 'T1' indicates tape-and-reel packaging when sourcing from distributors. Confirm RoHS compliance status via the '-E3' designation. Ensure the narrow SOIC-16 footprint matches the PCB layout requirements. Cross-reference the datasheet revision date against manufacturing lot codes for any potential process changes.
Selection Notes
Select this component for applications requiring high voltage handling and fast switching speeds. Compare the 35 Ω on-resistance limit against system signal integrity requirements. Consider the 105 ns turn-on time for bandwidth limitations. Verify that the 600 mW power dissipation rating accommodates the thermal design constraints of the target enclosure.
Part Context
This part belongs to the DG411HS series, which includes variants like the DG412HS and DG413HS. The DG411HS specifically provides four normally open switches. Other packages in the family include Plastic DIP (DG411HSDJ) and QFN (DG411HSDN). The HS suffix denotes the high-voltage silicon gate process technology used in this generation of switches.
Replacement Considerations
Direct pin-compatible replacements within the same series include DG411HSDY-E3 (tube packaging) and DG411HSDJ-E3 (DIP package). For different switching configurations, consider DG412HS (inverted logic) or DG413HS (mixed NO/NC). Ensure substitute parts maintain the same 16-pin narrow SOIC footprint and voltage ratings.
