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DG417DY-E3 is listed in the Analog Switches, Multiplexers, Demultiplexers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC SWITCH SPST-NCX1 35OHM 8SOIC. Review the specifications below when checking this part for your BOM.
The DG417DY-E3 is a precision single-pole single-throw (SPST) normally closed analog switch manufactured by Vishay Siliconix. It operates within a ±15 V analog signal range and supports dual or single supply voltages up to 44 V maximum. The device features a typical on-resistance of 20 Ω, with a maximum of 35 Ω across the -40 °C to +85 °C temperature range. Key dynamic characteristics include a turn-on time of 100 ns and a turn-off time of 60 ns. Power consumption is ultra-low at 35 nW, with leakage currents typically below 0.25 nA. It utilizes an epitaxial layer for latchup prevention and is housed in an 8-pin narrow SOIC package.
Verify the suffix 'E3' confirms RoHS compliance and lead-free terminations. Confirm the 'DY' designation matches the required 8-pin narrow SOIC surface-mount package. Ensure the operating environment stays within the specified -40 °C to +85 °C range to maintain guaranteed electrical parameters.
Select this component for designs requiring normally closed SPST switching with low on-resistance. Consider the DG418 if normally open logic is preferred, or the DG419 for single-pole double-throw configurations. Verify that the 20 Ω typical on-resistance meets the signal integrity requirements of the specific application circuit.
This part belongs to the DG417/DG418/DG419 series of monolithic CMOS analog switches. These devices are designed for portable and military applications where high performance and efficient board space usage are critical. The series shares common manufacturing processes and reliability standards.
DG417DJ-E3: Identical function in 8-pin plastic MiniDIP through-hole package.
The DG417 is a normally closed (NC) switch, meaning the channel conducts when the logic input is low.
Signals on the source or drain pins exceeding V+ or V- will be clamped by internal diodes. Forward diode current must be limited to maximum ratings.
Yes, an epitaxial layer is included in the high voltage silicon gate process to prevent latchup.
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