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DG419BDY-E3
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Product Detailed Parameters
- Description：IC SWITCH SPDT X 1 25OHM 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：25Ohm
- Channel-to-Channel Matching (ΔRon)：-
- Voltage - Supply, Single (V+)：13V ~ 36V
- Voltage - Supply, Dual (V±)：±7V ~ 22V
- Switch Time (Ton, Toff) (Max)：89ns, 80ns
- -3db Bandwidth：-
- Charge Injection：38pC
- Channel Capacitance (CS(off), CD(off))：12pF, 12pF
- Current - Leakage (IS(off)) (Max)：250pA
- Crosstalk：-88dB @ 1MHz
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Number of Circuits：1
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix DG419BDY-E3 is a precision monolithic quad SPDT CMOS analog switch housed in an 8-pin narrow SOIC package. It operates within a temperature range of -40 °C to +85 °C and supports dual supply voltages up to ±20 V or single supplies up to 44 V. The device features a maximum on-resistance of 25 Ω at room temperature, rising to 45 Ω across the full operating range. Key dynamic parameters include a turn-on time of 89 ns and a turn-off time of 80 ns under ±15 V conditions. It provides break-before-make switching action and includes an epitaxial layer to prevent latchup.
Feature Summary
- Break-before-make switching action ensures signal integrity during transitions.
- Epitaxial layer integration prevents latchup for enhanced reliability.
- CMOS logic compatibility allows direct interfacing with TTL and CMOS control signals.
Applications
- Precision test equipment
- Precision instrumentation
- Battery powered systems
- Sample-and-hold circuits
- Military radios
Procurement Notes
Verify the specific suffix 'E3' confirms RoHS compliance when sourcing replacements. Confirm the 'DY' designation matches the required 8-pin narrow SOIC footprint. Ensure the component meets the -40 °C to +85 °C operating temperature requirements for the target environment before finalizing procurement.
Selection Notes
Select this part for applications requiring high-voltage analog signal switching with low power consumption. The DG419B variant specifically offers SPDT configuration with break-before-make timing. Verify that the 25 Ω on-resistance meets the signal loss constraints of the circuit design.
Part Context
This component belongs to the DG417B/DG418B/DG419B series of precision monolithic CMOS analog switches. Manufactured using Vishay Siliconix's high voltage silicon gate (HVSG) process, the series is designed for portable and battery-powered industrial applications requiring efficient board space usage and high performance.
Replacement Considerations
DG419BDY-T1-E3
FAQ
What is the maximum analog signal range supported by the DG419BDY-E3?
The device supports an analog signal range of ±15 V when operated with dual supplies, or up to 44 V with a single supply.
Does the DG419BDY-E3 support break-before-make switching?
Yes, break-before-make switching is guaranteed for the DG419B configuration to prevent shorting between channels.
What is the typical charge injection value for this component?
The typical charge injection is 38 pC when measured at room temperature with a load capacitance of 10 nF.
