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DG419BDY-E3 is listed in the Analog Switches, Multiplexers, Demultiplexers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC SWITCH SPDT X 1 25OHM 8SOIC. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix DG419BDY-E3 is a precision monolithic quad SPDT CMOS analog switch housed in an 8-pin narrow SOIC package. It operates within a temperature range of -40 °C to +85 °C and supports dual supply voltages up to ±20 V or single supplies up to 44 V. The device features a maximum on-resistance of 25 Ω at room temperature, rising to 45 Ω across the full operating range. Key dynamic parameters include a turn-on time of 89 ns and a turn-off time of 80 ns under ±15 V conditions. It provides break-before-make switching action and includes an epitaxial layer to prevent latchup.
Verify the specific suffix 'E3' confirms RoHS compliance when sourcing replacements. Confirm the 'DY' designation matches the required 8-pin narrow SOIC footprint. Ensure the component meets the -40 °C to +85 °C operating temperature requirements for the target environment before finalizing procurement.
Select this part for applications requiring high-voltage analog signal switching with low power consumption. The DG419B variant specifically offers SPDT configuration with break-before-make timing. Verify that the 25 Ω on-resistance meets the signal loss constraints of the circuit design.
This component belongs to the DG417B/DG418B/DG419B series of precision monolithic CMOS analog switches. Manufactured using Vishay Siliconix's high voltage silicon gate (HVSG) process, the series is designed for portable and battery-powered industrial applications requiring efficient board space usage and high performance.
DG419BDY-T1-E3
The device supports an analog signal range of ±15 V when operated with dual supplies, or up to 44 V with a single supply.
Yes, break-before-make switching is guaranteed for the DG419B configuration to prevent shorting between channels.
The typical charge injection is 38 pC when measured at room temperature with a load capacitance of 10 nF.
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