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DG419BDY-T1-E3
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Product Detailed Parameters
- Description：IC SWITCH SPDT X 1 25OHM 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：25Ohm
- Channel-to-Channel Matching (ΔRon)：-
- Voltage - Supply, Single (V+)：13V ~ 36V
- Voltage - Supply, Dual (V±)：±7V ~ 22V
- Switch Time (Ton, Toff) (Max)：89ns, 80ns
- -3db Bandwidth：-
- Charge Injection：38pC
- Channel Capacitance (CS(off), CD(off))：12pF, 12pF
- Current - Leakage (IS(off)) (Max)：250pA
- Crosstalk：-88dB @ 1MHz
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Number of Circuits：1
- Grade：-
- Qualification：-
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Overview
The DG419BDY-T1-E3 is a precision monolithic CMOS analog switch manufactured by Vishay Siliconix. It features a single SPDT configuration housed in an 8-pin narrow SOIC package. The device operates with a supply voltage range of ±5 V to ±20 V and supports dual supplies from ±5 V to ±15 V. Key electrical parameters include a maximum on-resistance (RDS(on)) of 25 Ω at room temperature, rising to 29 Ω across the full operating temperature range of -40 °C to +85 °C. Turn-on time is specified at a maximum of 89 ns, while turn-off time reaches 80 ns under standard test conditions.
Feature Summary
- Break-before-make switching action ensures reliable signal routing without shorting paths.
- CMOS logic compatibility allows direct interfacing with TTL and CMOS control circuits.
- Epitaxial layer construction prevents latchup for enhanced operational stability.
Applications
- Precision test equipment
- Battery powered systems
- Sample-and-hold circuits
Procurement Notes
Verify that the ordering suffix matches the required specifications. The 'T1' suffix indicates reel packaging, while 'E3' confirms compliance with RoHS directives. Confirm the 'D' suffix corresponds to the -40 °C to +85 °C temperature range. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability.
Selection Notes
Select this component when a single SPDT switch with low on-resistance is required. The DG419B variant specifically provides break-before-make timing, distinguishing it from other switches in the series. Verify that the 8-pin SOIC package dimensions fit the available board space constraints.
Part Context
This part belongs to the DG417B/DG418B/DG419B family of precision analog switches. While the DG417B and DG418B offer quad SPST configurations, the DG419B provides a single SPDT topology. All variants share the same high-voltage silicon gate process technology and physical package options.
Replacement Considerations
DG419BDY-E3
FAQ
What is the specific switching configuration of the DG419B?
The DG419B contains a single Single-Pole Double-Throw (SPDT) switch circuit.
Does the DG419B support break-before-make operation?
Yes, break-before-make switching is guaranteed for the DG419B to prevent signal path shorting during transitions.
What is the maximum on-resistance value for this component?
The maximum on-resistance is 25 Ω at room temperature and 29 Ω across the full operating temperature range.
