DG419DJ-E3

DG419DJ-E3

$2.63
  • Description:IC SWITCH SPDT X 1 35OHM 8DIP
  • Series:-

SKU:3e2b8f3fde12 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SWITCH SPDT X 1 35OHM 8DIP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • Switch Circuit:SPDT
  • Multiplexer/Demultiplexer Circuit:2:01
  • On-State Resistance (Max):35Ohm
  • Channel-to-Channel Matching (ΔRon):-
  • Voltage - Supply, Single (V+):12V
  • Voltage - Supply, Dual (V±):±15V
  • Switch Time (Ton, Toff) (Max):175ns, 145ns
  • -3db Bandwidth:-
  • Charge Injection:60pC
  • Channel Capacitance (CS(off), CD(off)):8pF, 8pF
  • Current - Leakage (IS(off)) (Max):250pA
  • Crosstalk:-
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-PDIP
  • Number of Circuits:1
  • Grade:-
  • Qualification:-

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DG419DJ-E3

Overview

The DG419DJ-E3 is a precision monolithic CMOS analog switch manufactured by Vishay Siliconix. It features an SPDT configuration with one channel per chip, housed in an 8-pin plastic MiniDIP package. The device operates within a temperature range of -40 °C to +85 °C and supports single supply voltages from 5 V to 40 V, or dual supplies from ±5 V to ±20 V. Key electrical parameters include a maximum on-resistance (RDS(on)) of 35 Ω at room temperature and up to 45 Ω across the full temperature range. Turn-on time is specified at a maximum of 175 ns, while turn-off time reaches 145 ns. The component exhibits ultra-low power consumption with typical leakage currents in the nanoampere range.

Feature Summary

  • Break-before-make switching action ensures reliable signal routing without shorting paths
  • TTL and CMOS logic compatibility allows direct interfacing with standard digital control circuits
  • Epitaxial layer construction prevents latch-up for enhanced operational reliability
  • Low on-resistance and low charge injection support high-precision analog signal handling

Applications

  • Precision test equipment
  • Battery powered systems
  • Sample-and-hold circuits
  • Military radios
  • Guidance and control systems

Procurement Notes

Verify that the ordering suffix matches the required package type and RoHS compliance status. Confirm the specific revision level of the datasheet document number 70051 to ensure alignment with current manufacturing specifications. Check for any updates regarding lead-free terminations or environmental declarations before finalizing procurement orders.

Selection Notes

Select this component when a single-pole double-throw configuration is required for analog signal routing. Ensure the application voltage does not exceed the absolute maximum ratings of 44 V on V+ relative to GND. Verify that the logic input levels align with the specified thresholds for proper switching operation under the intended supply conditions.

Part Context

This part belongs to the DG417/DG418/DG419 series of precision CMOS analog switches. While sharing similar fabrication processes and performance characteristics, the DG419 is distinct due to its SPDT configuration compared to the SPST configurations of the DG417 and DG418. All variants utilize Vishay Siliconix's high-voltage silicon gate process.

Replacement Considerations

DG419DY-E3 serves as a surface-mount alternative within the same series.

DG419DJ-E3DG419DJ-E3
$2.63
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