DG419DY-T1-E3

$1.79

Description：IC SWITCH SPDT X 1 35OHM 8SOIC
Series：-

SKU:7d92e2b4ad38 Category: Analog Switches, Multiplexers, Demultiplexers Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：IC SWITCH SPDT X 1 35OHM 8SOIC
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Switch Circuit：SPDT
Multiplexer/Demultiplexer Circuit：2:01
On-State Resistance (Max)：35Ohm
Channel-to-Channel Matching (ΔRon)：-
Voltage - Supply, Single (V+)：12V
Voltage - Supply, Dual (V±)：±15V
Switch Time (Ton, Toff) (Max)：175ns, 145ns
-3db Bandwidth：-
Charge Injection：60pC
Channel Capacitance (CS(off), CD(off))：8pF, 8pF
Current - Leakage (IS(off)) (Max)：250pA
Crosstalk：-
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Number of Circuits：1
Grade：-
Qualification：-

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DG419DY-T1-E3

Overview

The DG419DY-T1-E3 is a precision CMOS analog switch manufactured by Vishay Siliconix, housed in an 8-lead narrow SOIC surface-mount package. It features a single SPDT configuration with a maximum on-resistance of 35 Ω and a turn-on time of 175 ns. The device supports dual supply voltages ranging from ±5 V to ±20 V (max 44 V) or a single supply up to 40 V. Operating temperatures span from -40 °C to +85 °C. Key electrical characteristics include ultra-low power dissipation of 35 nW, low leakage currents, and guaranteed break-before-make switching action.

Feature Summary

Break-before-make switching action prevents signal overlap during transitions
TTL and CMOS logic compatibility for simple interfacing
Epitaxial layer construction ensures latchup immunity
Low power consumption suitable for battery-operated systems

Applications

Precision test equipment
Sample-and-hold circuits
Battery powered systems
Military radios
Guidance and control systems

Procurement Notes

Verify the ordering suffix 'T1' indicates reel packaging when sourcing this component. Confirm RoHS compliance status via the '-E3' designation. Ensure the narrow SOIC footprint matches the PCB layout requirements. Cross-reference the specific Vishay datasheet document number 70051 for final parameter validation before implementation.

Selection Notes

Select the DG419DY-T1-E3 for applications requiring a single SPDT switch with high voltage ratings and low distortion. Compare against DG417 and DG418 if SPST configurations are needed instead. Consider the 35 Ω on-resistance limit for signal integrity requirements. Verify that the 175 ns transition time meets the system speed constraints.

Part Context

This part belongs to the DG417/DG418/DG419 series of precision analog switches built on Vishay's high-voltage silicon gate process. The DG419 specifically provides the SPDT topology within this family. The 'DY' suffix denotes the 8-pin narrow SOIC package, while 'T1' specifies tape and reel delivery.