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Product Detailed Parameters
- Description:IC SWITCH SPST-NOX4 80OHM 16QFN
- Series:-
- Mfr:Vishay Siliconix
- Package:Tape & Reel (TR)
- Switch Circuit:SPST - NO
- Multiplexer/Demultiplexer Circuit:1:01
- On-State Resistance (Max):80Ohm
- Channel-to-Channel Matching (ΔRon):-
- Voltage - Supply, Single (V+):13V ~ 36V
- Voltage - Supply, Dual (V±):±7V ~ 22V
- Switch Time (Ton, Toff) (Max):300ns, 200ns
- -3db Bandwidth:-
- Charge Injection:1pC
- Channel Capacitance (CS(off), CD(off)):5pF, 5pF
- Current - Leakage (IS(off)) (Max):500pA
- Crosstalk:-95dB @ 100kHz
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:16-VQFN Exposed Pad
- Supplier Device Package:16-QFN (4x4)
- Number of Circuits:4
- Grade:-
- Qualification:-
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Overview
The DG445BDN-T1-E4 is a monolithic quad single-pole single-throw (SPST) CMOS analog switch manufactured by Vishay Siliconix. It operates with dual supplies ranging from ±5 V to ±20 V or a single supply up to 36 V, featuring a maximum on-resistance of 80 Ω and a typical turn-on time of 120 ns. The device utilizes a 16-pin QFN package measuring 4 x 4 mm and supports an operating temperature range from -40 °C to +85 °C.
Feature Summary
- High-speed switching capability for analog and audio signals
- Minimized charge injection suitable for sample-and-hold circuits
- TTL and CMOS-compatible logic control interface
Applications
- Data acquisition systems
- Communication systems
- Automatic test equipment
- Medical instrumentation
- Audio switching
Procurement Notes
Verify the specific suffix T1-E4 against the manufacturer's ordering information to confirm the QFN-16 package and tape-and-reel packaging format. Ensure that the component meets RoHS compliance standards as indicated in the official documentation before finalizing procurement specifications.
Selection Notes
Select this component when low signal distortion and fast throughput are required. The DG445B variant provides normally-off logic states, contrasting with the DG444B which is normally-on. Verify that the application voltage does not exceed the absolute maximum ratings to prevent latchup or permanent damage.
Part Context
This part belongs to the DG444B/DG445B series, representing upgraded versions of the original DG444 and DG445 models. These devices are built using a high-voltage silicon-gate process with an epitaxial layer designed to prevent latchup, ensuring reliable operation across various industrial environments.
Replacement Considerations
The DG444BDN-T1-E4 serves as a functional alternative within the same family, differing primarily in its logic state configuration where it remains conductive when the input is low.
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