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Product Detailed Parameters
- Description:IC SWITCH SPST-NOX4 45OHM 16DIP
- Series:-
- Mfr:Vishay Siliconix
- Package:Bulk
- Switch Circuit:SPST - NO
- Multiplexer/Demultiplexer Circuit:1:01
- On-State Resistance (Max):45Ohm
- Channel-to-Channel Matching (ΔRon):2Ohm
- Voltage - Supply, Single (V+):10V ~ 18V
- Voltage - Supply, Dual (V±):±10V ~ 15V
- Switch Time (Ton, Toff) (Max):35ns, 25ns
- -3db Bandwidth:500MHz
- Charge Injection:4pC
- Channel Capacitance (CS(off), CD(off)):3pF, 2pF
- Current - Leakage (IS(off)) (Max):250pA
- Crosstalk:-87dB @ 5MHz
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Through Hole
- Package / Case:16-DIP (0.300", 7.62mm)
- Supplier Device Package:16-PDIP
- Number of Circuits:4
- Grade:-
- Qualification:-
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Overview
The DG612DJ-E3 is a high-speed, low-glitch analog switch from the Vishay Siliconix DG611 family. It features four independently controlled single-pole single-throw (SPST) channels built on a proprietary D/CMOS process combining lateral DMOS FETs with CMOS control logic. The device responds to opposite logic levels compared to the DG611. Key electrical parameters include a maximum on-resistance of 45 Ω at room temperature and 60 Ω across the full industrial range (-40 °C to 85 °C). Turn-on time is typically 12 ns with a maximum of 25 ns under standard test conditions. Charge injection is limited to ±2 pC typical. It supports dual supplies ranging from V+ = 5 V to 21 V and V- = -10 V to 0 V, or single supply operation. Quiescent power consumption is extremely low at 1.2 nW typical.
Feature Summary
- Combines high-speed lateral DMOS switching with low-power CMOS control logic for optimized performance
- Features minimal charge injection to reduce offset errors in fast sample-and-hold applications
- Responds to inverted logic levels relative to the DG611 variant within the same family
- Includes an epitaxial layer to prevent latchup during operation
Applications
- Fast sample-and-hold circuits requiring low aperture uncertainty
- Pixel-rate video switching for windows and picture-in-picture generation
- DAC deglitching and synchronous demodulators
- GaAs FET drivers for phased array radar systems
Procurement Notes
Verify the suffix 'E3' indicates lead-free and RoHS compliance when sourcing. Confirm the 'D' suffix corresponds to the 16-pin Narrow SOIC package variant. Ensure the operating environment stays within the specified -40 °C to 85 °C temperature range for guaranteed parameter limits. Check absolute maximum ratings regarding forward diode current clamping if input signals exceed supply rails.
Selection Notes
Select this component over the DG611 when inverted control logic is required for the specific circuit design. Consider the DG613 if normally closed switches are needed alongside normally open ones. Verify that the 18 Ω typical on-resistance meets the insertion loss requirements for the target analog signal path. Ensure the 500 MHz bandwidth is sufficient for the highest frequency components of the signal being switched.
Part Context
This part belongs to the DG611/DG612/DG613 family of high-speed analog switches. The DG612 specifically provides the inverse logic function of the DG611 while sharing identical physical characteristics and pinouts. The family utilizes a D/CMOS process to achieve speed and low power simultaneously, distinguishing it from standard CMOS or DMOS-only alternatives.
Replacement Considerations
The DG611DJ-E3 is electrically compatible but requires logic inversion. The DG613 offers mixed NO/NC configurations. No direct cross-brand substitutes are confirmed in the provided documentation.
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