DG612DY-T1-E3

DG612DY-T1-E3

$2.45
  • Description:IC SWITCH SPST-NOX4 45OHM 16SOIC
  • Series:-

SKU:b383c0319562 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SWITCH SPST-NOX4 45OHM 16SOIC
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Switch Circuit:SPST - NO
  • Multiplexer/Demultiplexer Circuit:1:01
  • On-State Resistance (Max):45Ohm
  • Channel-to-Channel Matching (ΔRon):2Ohm
  • Voltage - Supply, Single (V+):10V ~ 18V
  • Voltage - Supply, Dual (V±):±10V ~ 15V
  • Switch Time (Ton, Toff) (Max):35ns, 25ns
  • -3db Bandwidth:500MHz
  • Charge Injection:4pC
  • Channel Capacitance (CS(off), CD(off)):3pF, 2pF
  • Current - Leakage (IS(off)) (Max):250pA
  • Crosstalk:-87dB @ 5MHz
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SOIC
  • Number of Circuits:4
  • Grade:-
  • Qualification:-

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DG612DY-T1-E3

Overview

The DG612DY-T1-E3 is a high-speed, low-glitch analog switch manufactured by Vishay Siliconix. It features four single-pole single-throw (SPST) channels in a 16-pin Narrow SOIC package. The device utilizes lateral DMOS technology with CMOS control logic for fast switching and minimal charge injection. It operates on a single supply ranging from 4 V to 21 V or dual supplies from -10 V to 0 V. Key electrical parameters include a maximum on-resistance of 45 Ohms, a bandwidth of 500 MHz, turn-on time of 12 ns, and turn-off time of 8 ns at room temperature. The quiescent power consumption is extremely low at 1.2 nW.

Feature Summary

  • High-speed switching capability with minimized charge injection for clean signal transitions
  • Low on-resistance and wide bandwidth suitable for high-frequency applications
  • CMOS logic compatible interface allowing direct interfacing with standard digital systems
  • Low quiescent power consumption for efficient operation in battery-powered devices

Applications

  • Fast sample-and-hold circuits requiring low aperture uncertainty
  • Pixel-rate video switching for picture-in-picture and title overlays
  • DAC deglitching to eliminate switching transients
  • GaAs FET drivers for RF applications such as phased array radars

Procurement Notes

Verify the component status before procurement as availability may vary. Confirm that the 16-pin Narrow SOIC package matches your PCB footprint requirements. Ensure the logic level compatibility aligns with your system's control voltage. Check RoHS compliance documentation if required for your manufacturing process.

Selection Notes

Select the DG612DY-T1-E3 when low glitch energy and high speed are critical. Unlike the DG611, this variant responds to opposite logic levels, turning on with a logic '1'. Consider the 45 Ohm maximum on-resistance for insertion loss calculations. Verify that the analog signal range fits within your supply voltage constraints.

Part Context

This part belongs to the DG61x family of high-speed D/CMOS analog switches. It shares the same physical package and core switching technology as the DG611 and DG613. The primary distinction lies in the logic truth table; the DG612 activates with a high logic input, whereas the DG611 activates with a low logic input. The DG613 offers mixed normally open and closed configurations.

Replacement Considerations

The DG611DY-T1-E3 is a functional substitute with identical electrical characteristics but inverted logic levels. The DG613DY-T1-E3 provides mixed SPST/SPDT configurations within the same package. Verify logic polarity requirements when substituting these parts.

DG612DY-T1-E3DG612DY-T1-E3
$2.45
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