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DG636EEN-T1-GE4
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Product Detailed Parameters
- Description：IC SWITCH SPDTX2 96OHM 16MINIQFN
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：96Ohm
- Channel-to-Channel Matching (ΔRon)：300mOhm
- Voltage - Supply, Single (V+)：3V ~ 16V
- Voltage - Supply, Dual (V±)：±3V ~ 8V
- Switch Time (Ton, Toff) (Max)：46ns, 55ns
- -3db Bandwidth：700MHz
- Charge Injection：-0.33pC
- Channel Capacitance (CS(off), CD(off))：3.7pF, 4.4pF
- Current - Leakage (IS(off)) (Max)：1nA
- Crosstalk：-62dB @ 1MHz
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：16-UFQFN
- Supplier Device Package：16-miniQFN (1.8x2.6)
- Number of Circuits：2
- Grade：-
- Qualification：-
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Overview
The DG636EEN-T1-GE4 is a dual SPDT CMOS analog switch manufactured by Vishay Siliconix, housed in a 16-pin miniQFN package. It operates from +3 V to +16 V single supply or ±3 V to ±8 V dual supplies. Key electrical parameters include an on-resistance of up to 129 Ω at full temperature range, charge injection less than ±0.3 pC typical, and off-leakage current of 1 nA maximum. The device features turn-on time up to 58 ns, turn-off time up to 61 ns, and operates within a -40 °C to +125 °C temperature range with power dissipation of 525 mW.
Feature Summary
- Ultra-low charge injection for precision signal switching
- Low leakage current suitable for high-impedance applications
- Break-before-make switching action prevents signal shorting
- Compatible with standard logic levels across various supply voltages
Applications
- Data acquisition systems
- Medical instruments
- Precision instruments
- Communications systems
- Automated test equipment
- Sample and hold circuits
- Relay replacement
Procurement Notes
Verify the specific ordering suffix T1-GE4 corresponds to the required tape-and-reel packaging format and RoHS compliance status before finalizing procurement. Confirm that the 16-pin miniQFN package dimensions align with the target PCB footprint design constraints. Ensure the selected component meets the intended thermal management requirements given the specified power dissipation limits.
Selection Notes
Select this component when low charge injection and minimal leakage are critical for maintaining signal integrity in analog front-end designs. Consider the 16-pin miniQFN package for space-constrained layouts compared to the 14-pin TSSOP alternative. Evaluate the on-resistance flatness and bandwidth requirements against the specific operating voltage conditions to ensure performance meets system specifications.
Part Context
This part belongs to the DG636E family of dual SPDT analog switches. It shares functional characteristics with other variants like the DG636EEQ-T1-GE4, differing primarily in the physical package type. The miniQFN package offers a smaller footprint while maintaining similar electrical performance metrics defined in the official datasheet.
Replacement Considerations
DG636EEQ-T1-GE4 is a confirmed substitute offering identical electrical specifications but utilizes a 14-pin TSSOP package instead of the 16-pin miniQFN. Verify mechanical compatibility and pinout alignment before substitution.
