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DG636EEQ-T1-GE3
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Product Detailed Parameters
- Description：IC SWITCH SPDT X 2 96OHM 16TSSOP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：96Ohm
- Channel-to-Channel Matching (ΔRon)：300mOhm
- Voltage - Supply, Single (V+)：3V ~ 16V
- Voltage - Supply, Dual (V±)：±3V ~ 8V
- Switch Time (Ton, Toff) (Max)：46ns, 55ns
- -3db Bandwidth：700MHz
- Charge Injection：-0.33pC
- Channel Capacitance (CS(off), CD(off))：3.7pF, 4.4pF
- Current - Leakage (IS(off)) (Max)：1nA
- Crosstalk：-62dB @ 1MHz
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：16-TSSOP
- Number of Circuits：2
- Grade：-
- Qualification：-
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Overview
The DG636EEQ-T1-GE3 is a dual SPDT CMOS analog switch manufactured by Vishay Siliconix. It operates from +3 V to +16 V single supply or ±3 V to ±8 V dual supplies. The device features ultra-low charge injection of less than ±0.3 pC and leakage currents of 100 pA maximum. It provides an on-resistance of 96 Ω maximum at ±5 V and 129 Ω maximum at +5 V single supply. The component supports -40 °C to +125 °C operation, utilizes a 14-pin TSSOP package, and includes break-before-make switching action with logic inputs compatible with standard digital levels.
Feature Summary
- Ultra-low charge injection for precision signal integrity
- Low off-state leakage current across full temperature range
- Break-before-make switching prevents signal shorting
Applications
- Data acquisition systems
- Medical instruments
- Precision instruments
- Communications systems
- Sample and hold circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and temperature grade. Confirm RoHS compliance status through the latest datasheet revision. Ensure the component matches the required voltage specifications for the target application environment before procurement.
Selection Notes
Select this component when low charge injection and minimal leakage are critical for maintaining signal accuracy in analog front ends. Verify that the operating voltage falls within the specified single or dual supply ranges. Consider the 14-pin TSSOP footprint constraints during PCB layout design to ensure adequate thermal dissipation and mechanical stability.
Part Context
This part belongs to the DG636E family of dual SPDT analog switches. It shares functional similarities with other Vishay CMOS switches but is distinguished by its specific low-leakage characteristics and TSSOP packaging. The device is designed to replace electromechanical relays in compact electronic designs requiring high reliability.
Replacement Considerations
DG636EEQ-T1-GE4 is a verified substitute part number offering identical electrical performance and pinout compatibility within the same product family.
