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DG636EN-T1-E4
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Product Detailed Parameters
- Description：IC SW SPDTX2 115OHM 16MINIQFN
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：115Ohm
- Channel-to-Channel Matching (ΔRon)：1Ohm
- Voltage - Supply, Single (V+)：2.7V ~ 12V
- Voltage - Supply, Dual (V±)：±2.7V ~ 5V
- Switch Time (Ton, Toff) (Max)：60ns, 52ns
- -3db Bandwidth：610MHz
- Charge Injection：0.1pC
- Channel Capacitance (CS(off), CD(off))：2.1pF, 4.2pF
- Current - Leakage (IS(off)) (Max)：100pA
- Crosstalk：-88dB @ 10MHz
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：16-WFQFN
- Supplier Device Package：16-miniQFN (1.8x2.6)
- Number of Circuits：2
- Grade：-
- Qualification：-
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Overview
The DG636EN-T1-E4 is a dual single-pole double-throw (SPDT) analog switch IC manufactured by Vishay Siliconix. It operates within a single supply voltage range of 3 V to 16 V or a dual supply range of ±3 V to ±8 V. The device features a maximum on-resistance of 129 Ohms and supports a maximum power dissipation of 525 mW. Switching performance includes a maximum turn-on time of 58 ns and a maximum turn-off time of 61 ns. It is housed in a QFN-16 package and functions reliably across an operating temperature range from -40 °C to +125 °C.
Feature Summary
- Dual SPDT configuration for signal routing applications
- Low charge injection characteristics suitable for precision circuits
- Wide single and dual supply voltage operation
Applications
- Data acquisition systems
- Instrumentation front ends
- Communication equipment signal switching
Procurement Notes
Verify the specific suffix 'E4' against current manufacturer documentation to confirm RoHS compliance status and lead times, as component availability may vary. Confirm that the QFN-16 package matches the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when dual independent SPDT switching is required with moderate on-resistance levels. Ensure the application voltage does not exceed the 16 V single supply limit. Consider thermal management if operating near the 525 mW power dissipation limit in enclosed environments.
Part Context
This part belongs to the DG636 series of high-performance analog switches. It shares functional similarities with other Vishay siliconix devices but is distinct in its specific pinout and electrical parameters compared to the DG2517 or DG1413 families.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative dual SPDT switches based on pin-to-pin matching and electrical parameter equivalence.
