DGD2012S8-13

Gate Driver Overview

The DGD2012S8-13 is a high-speed, mid-voltage half-bridge gate driver IC designed for N-channel MOSFETs. It operates within a supply voltage range of 10 V to 20 V and features interleaved conduction protection. The device provides peak output currents of 1.9 A source and 2.3 A sink. Typical switching times include a rise time of 40 ns and a fall time of 20 ns. It supports a maximum high-side bootstrap voltage of 200 V and functions reliably across an operating temperature range from -40°C to +125°C.

Gate Driver Feature Summary

• Integrates interleaved conduction protection to prevent shoot-through in half-bridge configurations.
• Provides robust drive capability with asymmetric peak output currents for efficient MOSFET switching.
• Supports high-voltage applications with a maximum high-side bootstrap voltage rating of 200 V.

Gate Driver Applications

• Driving N-channel MOSFETs in half-bridge power stages
• Industrial motor control systems requiring interleaved conduction protection
• Mid-voltage power conversion circuits

Gate Driver Procurement Notes

Verify the specific datasheet revision and RoHS compliance status before procurement. Confirm that the SO-8 package dimensions match your PCB footprint requirements. Ensure the selected supplier provides traceability documentation consistent with Diodes Incorporated manufacturing standards. Check for any specific handling instructions related to moisture sensitivity levels indicated in the official component documentation.

Gate Driver Selection Notes

Select this component when interleaved conduction protection is required for N-channel MOSFET half-bridge applications. It is suitable for designs needing a 200 V high-side voltage capability with moderate drive strength. Consider the 10 V to 20 V supply range and the specific rise and fall time characteristics for timing-sensitive power electronics designs.

Gate Driver Part Context

This part belongs to the DGD series of high-voltage gate drivers from Diodes Incorporated. These devices are engineered for industrial and automotive markets, focusing on reliability and integrated protection features. The DGD2012S8-13 specifically targets mid-voltage applications where shoot-through prevention is critical for system efficiency and safety.

Gate Driver Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Verify compatibility with alternative half-bridge drivers by comparing pinout configurations, drive current capabilities, and protection feature sets against the original specifications.