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DGD2181MS8-13 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is IC GATE DRVR HALF-BRIDGE 8SO. Review the specifications below when checking this part for your BOM.
The DGD2181MS8-13 is a high-voltage gate driver manufactured by Diodes Incorporated, designed for driving N-channel MOSFETs and IGBTs. It features a single driver configuration with two outputs in an SOIC-8 package. The device operates on a supply voltage range of 10 V to 20 V, delivering a peak output current of 2.3 A. Key timing parameters include a rise time of 40 ns and a fall time of 20 ns. Maximum delay times are specified at 270 ns for turn-on and 330 ns for turn-off. The component supports CMOS and TTL logic inputs and functions within an operating temperature range of -40°C to +125°C.
Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status through official documentation before integration. Check moisture sensitivity level requirements for surface-mount assembly processes. Ensure the supplier provides valid traceability data for quality assurance protocols.
Select this component when a single-channel high-voltage driver is required for half-bridge topologies. The SOIC-8 package offers a compact solution for space-constrained designs. Consider the 2.3 A output capability for moderate-power switching applications. Verify that the 600V high-side rating aligns with the target circuit voltage levels.
This part belongs to the DGD218x series of high-voltage gate drivers from Diodes Incorporated. It shares functional similarities with other models in the family but differs in channel count and package type. The MS8 suffix indicates the specific SOIC-8 surface-mount packaging configuration used for this variant.
DGD21814MS14-13
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