DI005N03PW-AQ

$0.31

Description：MOSFET POWERQFN 2X2 30V 0.02OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0024d0a5cb4b Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 2X2 30V 0.02OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：448 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：6-QFN (2x2)
Package / Case：6-UDFN Exposed Pad

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DI005N03PW-AQ

Overview

The DI005N03PW-AQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN2x2 package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 5 A at 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 20 mΩ at VGS = 10 V and 32 mΩ at VGS = 4.5 V. Peak drain current reaches 40 A, with power dissipation rated at 700 mW. Operating junction temperature spans from -55°C to +150°C. The component meets RoHS standards and carries the -AQ suffix indicating AEC-Q101 qualification.

Feature Summary

Tiny, space-saving package with low profile height
Low on-state resistance for efficient power handling
Fast switching times combined with low gate charge
Qualified to AEC-Q101 automotive standards

Applications

Power Management Units
Battery powered devices
DC-DC Converters
Load Switches

Procurement Notes

Verify that the ordering suffix matches the required qualification level. The -AQ suffix denotes AEC-Q101 qualified parts, while -Q indicates compliance. Confirm the specific datasheet version before design integration, as Diotec reserves the right to update product information without notice. Ensure PCB layout accommodates the specified copper pad dimensions for accurate thermal performance.

Selection Notes

Select this component for applications requiring compact footprints and high efficiency in low-voltage environments. The 30V rating suits battery-operated systems and DC-DC converters. Evaluate thermal constraints carefully, as the QFN2x2 package has a thermal resistance of 178 K/W. Ensure gate drive voltages align with the threshold requirements for optimal RDS(on) performance.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial grade usage. The DI005N03PW series utilizes silicon technology to provide robust switching capabilities in small form factors. It is engineered to support modern electronics where space conservation and reliable operation under varying temperatures are critical design parameters.