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Product Detailed Parameters
- Description：MOSFET POWERQFN 2X2 N 30V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：6-QFN (2x2)
- Package / Case：6-PowerUDFN
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Overview
The DI010N03PW-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN2x2 package. It features a drain-source voltage (VDSS) of 30 V and continuous drain current (ID) ratings of 10 A at 25°C and 7 A at 70°C. The device exhibits a low on-state resistance (RDS(on)) of 12 mΩ at VGS=10V and 16 mΩ at VGS=4.5V. Key dynamic parameters include a total gate charge (Qg) of 25 nC, turn-on delay of 16 ns, and rise time of 72 ns. It supports a peak drain current of 50 A and single pulse avalanche energy of 20 mJ, with a maximum junction temperature of 150°C.
Feature Summary
- Tiny, space-saving QFN2x2 package with low profile height
- Low on-state resistance for efficient power handling
- Fast switching times and low gate charge
- AEC-Q101 qualified for automotive reliability
Applications
- Power Management Units
- Battery powered devices
- DC-DC Converters
- Load Switches
Procurement Notes
Verify the specific suffix '-AQ' to confirm AEC-Q101 qualification status, as standard versions lack this automotive grade certification. Ensure compatibility with the QFN2x2 footprint during PCB layout. Confirm RoHS compliance and REACH registration requirements for your region. Check the latest datasheet version for any updates to thermal or electrical characteristics before finalizing designs.
Selection Notes
Select this component when space constraints require a QFN2x2 package while maintaining high current capabilities up to 10 A. The low RDS(on) makes it suitable for battery-powered applications where efficiency is critical. Consider the 30 V rating for low-voltage DC-DC converter topologies. Verify that the thermal resistance of 89 K/W aligns with your system's cooling strategy.
Part Context
Diotec Semiconductor specializes in discrete semiconductor components, including MOSFETs designed for industrial, automotive, and consumer electronics. The DI010N03PW belongs to their Power MOSFET lineup, which emphasizes compact packaging and high performance. The company provides SPICE models and STEP files to support design integration.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What does the -AQ suffix indicate?
The -AQ suffix indicates that the DI010N03PW-AQ is qualified according to the AEC-Q101 automotive standard.
What is the maximum single pulse avalanche energy?
The device supports a single pulse avalanche energy (EAS) of 20 mJ under specified test conditions.
How does the continuous drain current change with temperature?
The continuous drain current is rated at 10 A at 25°C ambient temperature and derates to 7 A at 70°C ambient temperature.
