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Product Detailed Parameters
- Description：MOSFET, POWERQFN 3X3, -40V, -35A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2570 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
DI035P04PT-AQ is a P-Channel enhancement mode MOSFET from Diotec Semiconductor, housed in an 8-PowerVDFN (3x3 mm) surface-mount package. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 35 A at case temperature. The device exhibits a maximum on-resistance of 15 mΩ at 10 V gate drive. Key electrical parameters include a gate threshold voltage of 1.7 V, gate charge of 30 nC, and power dissipation of 25 W. It operates within a junction temperature range of -55°C to +150°C and holds AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards for robust performance in demanding environments.
- Compact PowerQFN 3x3 footprint designed for efficient space utilization in dense circuit board layouts.
- Low on-resistance characteristics optimized for minimizing conduction losses in high-current switching applications.
Applications
- Automotive electronic control units requiring reliable power switching
- Load management systems in vehicle power distribution networks
- Motor driver circuits for automotive actuators
Procurement Notes
Verify the specific suffix 'AQ' indicates AEC-Q101 automotive qualification status directly with Diotec Semiconductor or authorized distributors. Confirm that the requested part matches the DI035P04PT-AQ designation rather than the standard DI035P04PT. Ensure supply chain sources provide valid traceability documentation for automotive grade components prior to procurement.
Selection Notes
Select this component when a P-Channel MOSFET with 40 V rating and 35 A current capacity is required in a compact 3x3 mm package. Consider the 15 mΩ on-resistance for thermal management efficiency. Verify compatibility with 10 V gate drive levels for optimal performance. Ensure the application environment supports the specified operating temperature range and meets automotive qualification requirements.
Part Context
The DI035P04PT-AQ belongs to Diotec's DI0XX series of power MOSFETs, specifically engineered for automotive applications. It complements other devices like the DI048N04PT-AQ by offering a P-Channel alternative in the same PowerQFN 3x3 form factor. This series emphasizes high current density and low resistance within small footprints suitable for modern automotive electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Diotec Semiconductor technical support for verified cross-reference data before replacing this component in existing designs.
