DI040N03PT

$0.12

Description：MOSFET POWERQFN 3X3 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:20422043d3af Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI040N03PT

Overview

The DI040N03PT is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN3x3 package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 40 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of approximately 6 mΩ at VGS = 10 V and ID = 15 A. Maximum power dissipation is rated at 30 W, with a junction temperature range from -55°C to +175°C. Single pulse avalanche energy capability is specified at 100 mJ.

Feature Summary

Tiny, space-saving package with low profile height
Low on-state resistance for efficient conduction
Fast switching times combined with low gate charge
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm that the required automotive or industrial reliability level matches the selected suffix before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high current handling in a compact footprint. Ensure thermal management aligns with the 30 W power dissipation rating at 25°C case temperature. Verify that the 30 V breakdown voltage provides adequate margin for the target circuit's operating conditions and transient spikes.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for modern electronics. It utilizes silicon technology within a QFN3x3 case outline. The product line includes variants with different automotive qualifications to support diverse commercial and industrial design requirements.