DI080N03PQ

$0.41

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:7a9f590c07af Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：163 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7460 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI080N03PQ

Overview

The DI080N03PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 (TDSON-8/DFN5060) package. It features a drain-source voltage of 30 V and a continuous drain current of 80 A at 25°C case temperature. The device exhibits a typical on-state resistance of 1.4 mΩ at VGS=10V and ID=30A, with a maximum of 2.5 mΩ. Key dynamic parameters include a total gate charge of 163 nC, turn-on delay of 43 ns, and rise time of 71 ns. Thermal performance includes a junction-to-case thermal resistance of 3.6 K/W and a power dissipation rating of 35 W. The component supports a single pulse avalanche energy of 150 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low profile, space-saving package design
Low on-state resistance for efficient conduction
Fast switching times with low gate charge
Avalanche rated capability

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm these distinctions match project requirements before procurement. Ensure sourcing channels provide official datasheets matching the selected suffix variant.

Selection Notes

Select this component for applications requiring high current handling in a compact footprint. The 30V rating suits low-voltage systems. Evaluate thermal management needs against the 35W dissipation limit and 3.6 K/W thermal resistance. Consider the 163 nC gate charge for driver capability. Verify that the avalanche energy rating meets circuit protection requirements.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup utilizing trench technology. It is designed for commercial and industrial use. The QFN5x6 package offers a compact solution compared to traditional through-hole or larger surface-mount packages. It complements other Diotec discrete semiconductors like diodes and regulators in complete electronic solutions.