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The DI080N06PQ-AQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a QFN5x6 package with AEC-Q101 qualification. Key electrical parameters include a drain-source voltage (VDSS) of 65 V, continuous drain current (ID) of 105 A at 25°C case temperature, and a maximum on-state resistance (RDS(on)) of 4.5 mΩ at VGS=10V. The device supports a peak drain current of 480 A and offers an avalanche energy rating of 185.4 mJ. Thermal characteristics specify a junction-to-case thermal resistance (RthJC) of less than 1.9 K/W.
Verify the specific suffix -AQ confirms AEC-Q101 qualification status before procurement. Confirm that the component meets the required commercial or industrial grade reliability standards for the intended application environment. Ensure the ordering documentation explicitly references the DI080N06PQ-AQ part number to avoid confusion with standard grades.
Select this component when a low-profile surface-mount solution is required for high-current switching applications. The 65 V rating and 105 A continuous current capacity make it suitable for synchronous rectification in power supplies. Consider the 4.5 mΩ maximum RDS(on) for efficiency calculations under heavy load conditions.
Diotec Semiconductor specializes in discrete semiconductor components including diodes, transistors, and MOSFETs. Founded in Germany in 1973, the company provides solutions for automotive, industrial, and consumer electronics markets. This product belongs to their PowerQFN series, emphasizing compact packaging and high performance.
The suffix -AQ indicates that the DI080N06PQ-AQ is qualified according to the AEC-Q101 automotive standard.
Yes, the datasheet specifies that the device is avalanche rated with a single pulse avalanche energy (EAS) of 185.4 mJ.