DI080N06PQ-AQ

DI080N06PQ-AQ

$2.24
  • Description:MOSFET POWERQFN 5X6 N 65V 105A 0
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:77ce2e0df18d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET POWERQFN 5X6 N 65V 105A 0
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):65 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4128 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):80W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-QFN (5x6)
  • Package / Case:8-PowerTDFN

Download product information

DI080N06PQ-AQ

Overview

The DI080N06PQ-AQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a QFN5x6 package with AEC-Q101 qualification. Key electrical parameters include a drain-source voltage (VDSS) of 65 V, continuous drain current (ID) of 105 A at 25°C case temperature, and a maximum on-state resistance (RDS(on)) of 4.5 mΩ at VGS=10V. The device supports a peak drain current of 480 A and offers an avalanche energy rating of 185.4 mJ. Thermal characteristics specify a junction-to-case thermal resistance (RthJC) of less than 1.9 K/W.

Feature Summary

  • Avalanche rated capability for robust transient handling
  • Low profile, space-saving QFN5x6 package design
  • Fast switching times combined with low gate charge
  • Compliant to RoHS, REACH, and Conflict Minerals regulations

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Power Tools
  • Synchronous Rectifiers

Procurement Notes

Verify the specific suffix -AQ confirms AEC-Q101 qualification status before procurement. Confirm that the component meets the required commercial or industrial grade reliability standards for the intended application environment. Ensure the ordering documentation explicitly references the DI080N06PQ-AQ part number to avoid confusion with standard grades.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-current switching applications. The 65 V rating and 105 A continuous current capacity make it suitable for synchronous rectification in power supplies. Consider the 4.5 mΩ maximum RDS(on) for efficiency calculations under heavy load conditions.

Part Context

Diotec Semiconductor specializes in discrete semiconductor components including diodes, transistors, and MOSFETs. Founded in Germany in 1973, the company provides solutions for automotive, industrial, and consumer electronics markets. This product belongs to their PowerQFN series, emphasizing compact packaging and high performance.

FAQ

What does the suffix -AQ indicate for this MOSFET?

The suffix -AQ indicates that the DI080N06PQ-AQ is qualified according to the AEC-Q101 automotive standard.

Is the DI080N06PQ-AQ capable of handling avalanche events?

Yes, the datasheet specifies that the device is avalanche rated with a single pulse avalanche energy (EAS) of 185.4 mJ.

DI080N06PQ-AQDI080N06PQ-AQ
$2.24
Buy Now